 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| Elektronische Bauelemente 115 mAMPS, 60VOLTS, RDS(on)=7.5 Small Signal MOSFET RoHS Compliant Product 2N7002W A suffix of "-C" specifies halogen & lead-free N-Channel SOT-323 MAXIMUM RATINGS Rating Drain-Source Voltage Drain-Gate Voltage (RGS = 1.0 M) Drain Current - Continuous TC = 25C (Note 1.) - Continuous TC = 100C (Note 1.) - Pulsed (Note 2.) Gate-Source Voltage - Continuous - Non-repetitive (tp 50 s) Symbol VDSS VDGR ID ID IDM Value 60 60 115 75 800 Unit Vdc Vdc mAdc N-Channel VGS VGSM 20 40 Vdc Vpk THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR-5 Board (Note 3.) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate,(Note 4.) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 556 300 2.4 RJA TJ, Tstg 417 -55 to +150 C/W C Unit mW mW/C C/W mW mW/C 3 1 2 2 RJA PD SOT-323 MARKING DIAGRAM & PIN ASSIGNMENT Drain 3 1. The Power Dissipation of the package may result in a lower continuous drain current. 2. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. 3. FR-5 = 1.0 x 0.75 x 0.062 in. 4. Alumina = 0.4 x 0.3 x 0.025 in 99.5% alumina. 1 2 Gate Source SOT-323 Dim A B C D G H J K L S V Min 1.800 1.150 K72 , 702 = Device Code Max 2.200 1.350 1.000 0.400 1.400 0.100 0.250 0.500 0.720 2.400 0.420 D H K J C V 1 3 2 A L 0.800 0.300 1.200 0.000 0.100 0.350 0.590 2.000 0.280 BS G All Dimension in mm http://www.SeCoSGmbH.com Any changing of specification will not be informed individual 01-Jun-2005 Rev. A Page 1 of 3 Elektronische Bauelemente 115 mAMPS, 60VOLTS, RDS(on)=7.5 Small Signal MOSFET 2N7002W ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Drain-Source Breakdown Voltage (VGS = 0, ID = 10 Adc) Zero Gate Voltage Drain Current (VGS = 0, VDS = 60 Vdc) Gate-Body Leakage Current, Forward (VGS = 20 Vdc) Gate-Body Leakage Current, Reverse (VGS = -20 Vdc) TJ = 25C TJ = 125C V(BR)DSS IDSS IGSSF IGSSR 60 - - - - - - - - - - 1.0 500 100 -100 Vdc Adc nAdc nAdc ON CHARACTERISTICS (Note 2.) Gate Threshold Voltage (VDS = VGS, ID = 250 Adc) On-State Drain Current (VDS 2.0 VDS(on), VGS = 10 Vdc) Static Drain-Source On-State Voltage (VGS = 10 Vdc, ID = 500 mAdc) (VGS = 5.0 Vdc, ID = 50 mAdc) Static Drain-Source On-State Resistance (VGS = 10 V, ID = 500 mAdc) TC = 25C TC = 125C (VGS = 5.0 Vdc, ID = 50 mAdc) TC = 25C TC = 125C Forward Transconductance (VDS 2.0 VDS(on), ID = 200 mAdc) VGS(th) ID(on) VDS(on) - - rDS(on) - - - - gFS 80 - - - - - 7.5 13.5 7.5 13.5 - mmhos - - 3.75 0.375 Ohms 1.0 500 - - 2.5 - Vdc mA Vdc DYNAMIC CHARACTERISTICS Input Capacitance (VDS = 25 Vdc, VGS = 0, f = 1.0 MHz) Output Capacitance (VDS = 25 Vdc, VGS = 0, f = 1.0 MHz) Reverse Transfer Capacitance (VDS = 25 Vdc, VGS = 0, f = 1.0 MHz) Ciss Coss Crss - - - - - - 50 25 5.0 pF pF pF SWITCHING CHARACTERISTICS (Note 2.) Turn-On Delay Time Turn-Off Delay Time (VDD = 25 Vdc, ID ^ 500 mAdc, RG = 25 , RL = 50 , Vgen = 10 V) td(on) td(off) - - - - 20 40 ns ns BODY-DRAIN DIODE RATINGS Diode Forward On-Voltage (IS = 11.5 mAdc, VGS = 0 V) Source Current Continuous (Body Diode) Source Current Pulsed 2. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. VSD IS ISM - - - - - - -1.5 -115 -800 Vdc mAdc mAdc http://www.SeCoSGmbH.com Any changing of specification will not be informed individual 01-Jun-2005 Rev. A Page 2 of 3 2N7002W Elektronische Bauelemente 115 mAMPS, 60VOLTS, RDS(on)=7.5 Small Signal MOSFET TYPICAL ELECTRICAL CHARACTERISTICS 2.0 1.8 I D, DRAIN CURRENT (AMPS) 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 VDS, DRAIN SOURCE VOLTAGE (VOLTS) TA = 25C I D, DRAIN CURRENT (AMPS) VGS = 10 V 9V 8V 7V 6V 5V 4V 3V 9.0 10 0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 VGS, GATE SOURCE VOLTAGE (VOLTS) 9.0 10 0.8 0.6 0.4 0.2 1.0 VDS = 10 V -55C 125C 25C Figure 1. Ohmic Region Figure 2. Transfer Characteristics r DS(on) , STATIC DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) VGS(th) , THRESHOLD VOLTAGE (NORMALIZED) 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 -60 -20 +20 +60 T, TEMPERATURE (C) +100 +140 VGS = 10 V ID = 200 mA 1.2 1.05 1.1 1.10 1.0 0.95 0.9 0.85 0.8 0.75 0.7 -60 -20 +20 +60 T, TEMPERATURE (C) +100 +140 VDS = VGS ID = 1.0 mA Figure 3. Temperature versus Static Drain-Source On-Resistance Figure 4. Temperature versus Gate Threshold Voltage http://www.SeCoSGmbH.com Any changing of specification will not be informed individual 01-Jun-2005 Rev. A Page 3 of 3 |
Price & Availability of 2N7002W
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |